• DocumentCode
    3362234
  • Title

    A FET propagation effects

  • Author

    Balti, M. ; Samet, A. ; Pasquet, D.

  • Author_Institution
    Lab. - SysCom de l´´ENIT, Tunis
  • fYear
    2007
  • fDate
    11-14 Dec. 2007
  • Firstpage
    270
  • Lastpage
    273
  • Abstract
    A field-effect transistor constitutes a propagation structure along its gate width. Telegraphists equations are solved for this structure. One deduces from this the effect of the propagation on the transistor Z-parameters which can be taken into account in electric simulations and which may improve the use of long transistors at lower frequencies and of short transistors at higher frequencies [1]. New elements have been added to the equivalent circuit in order to take into account the propagation phenomena.
  • Keywords
    equivalent circuits; field effect transistors; FET propagation effects; electric simulations; equivalent circuit; field-effect transistor; gate width; propagation phenomena; propagation structure; telegraphists equations; transistor Z-parameters; transistors; Admittance; Circuit simulation; Electrodes; Equations; Equivalent circuits; FETs; Frequency; Inductance; Performance analysis; Propagation losses;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronics, Circuits and Systems, 2007. ICECS 2007. 14th IEEE International Conference on
  • Conference_Location
    Marrakech
  • Print_ISBN
    978-1-4244-1377-5
  • Electronic_ISBN
    978-1-4244-1378-2
  • Type

    conf

  • DOI
    10.1109/ICECS.2007.4510982
  • Filename
    4510982