Title :
A FET propagation effects
Author :
Balti, M. ; Samet, A. ; Pasquet, D.
Author_Institution :
Lab. - SysCom de l´´ENIT, Tunis
Abstract :
A field-effect transistor constitutes a propagation structure along its gate width. Telegraphists equations are solved for this structure. One deduces from this the effect of the propagation on the transistor Z-parameters which can be taken into account in electric simulations and which may improve the use of long transistors at lower frequencies and of short transistors at higher frequencies [1]. New elements have been added to the equivalent circuit in order to take into account the propagation phenomena.
Keywords :
equivalent circuits; field effect transistors; FET propagation effects; electric simulations; equivalent circuit; field-effect transistor; gate width; propagation phenomena; propagation structure; telegraphists equations; transistor Z-parameters; transistors; Admittance; Circuit simulation; Electrodes; Equations; Equivalent circuits; FETs; Frequency; Inductance; Performance analysis; Propagation losses;
Conference_Titel :
Electronics, Circuits and Systems, 2007. ICECS 2007. 14th IEEE International Conference on
Conference_Location :
Marrakech
Print_ISBN :
978-1-4244-1377-5
Electronic_ISBN :
978-1-4244-1378-2
DOI :
10.1109/ICECS.2007.4510982
