Title :
The 4500 V-750 A planar gate press pack IEGT
Author :
Kon, Hironobu ; Nakayama, Kazuya ; Yanagisawa, Satosi ; Miwa, Junichi ; Uetake, Yosinari
Author_Institution :
Toshiba Corp., Yokohama, Japan
Abstract :
This paper presents the 4500 V-750 A planar gate injection enhanced gate transistor (P-IEGT), which has a wide cell width. By increasing the gate width, the planar devices achieve the carrier injection enhancement effect. The wide gate structure shows better characteristics for high voltage planar devices than the conventional IGBT. The on-state voltage drop is 3.8 V at 50 A/cm2, Tj =25°C. The value is low enough for a 4500 V rated MOS gate transistor. We achieve turn off capability at Vce (peak)=4000 V, Ic=1600 A without adding a dV/dt snubber at Tj=125°C. The results show that the P-IEGT has a very wide SOA
Keywords :
carrier mobility; insulated gate bipolar transistors; power bipolar transistors; semiconductor device packaging; semiconductor device testing; 125 C; 1600 A; 25 C; 3.8 V; 4000 V; 4500 V; 750 A; IGBT; MOS gate transistor; P-IEGT; P-IEGT SOA; carrier injection enhancement effect; cell width; dV/dt snubber; gate width; high voltage planar devices; on-state voltage drop; planar devices; planar gate injection enhanced gate transistor; planar gate press pack IEGT; turn-off capability; wide gate structure; Buildings; Charge carrier density; Electron emission; Insulated gate bipolar transistors; Low voltage; MOSFETs; Semiconductor devices; Semiconductor optical amplifiers; Systems engineering and theory; Thyristors;
Conference_Titel :
Power Semiconductor Devices and ICs, 1998. ISPSD 98. Proceedings of the 10th International Symposium on
Conference_Location :
Kyoto
Print_ISBN :
0-7803-4752-8
DOI :
10.1109/ISPSD.1998.702638
