Title :
A CMOS low noise amplifier at 2.4 GHz with active inductor load
Author :
Pascht, A. ; Fischer, J. ; Berroth, M.
Author_Institution :
Inst. for Electr. & Opt. Commun. Eng., Stuttgart Univ., Germany
Abstract :
A two stage cascode CMOS low noise amplifier (LNA) with an active inductor load is presented. On-chip active inductors require 90% less silicon area at a higher quality-factor. Comparison of measurement and simulation of an active inductor shows the high quality factor. Simulations of the low noise amplifier show the advantages of active inductors with similar performance, even with regard to the noise figure. The simulated gain and noise figure are 19 dB and 2 dB respectively.
Keywords :
CMOS analogue integrated circuits; Q-factor; UHF amplifiers; UHF integrated circuits; circuit simulation; inductors; integrated circuit measurement; integrated circuit modelling; integrated circuit noise; 19 dB; 2 dB; CMOS low noise amplifier; active inductor; active inductor load; cascode CMOS LNA; inductor measurement; inductor performance; low noise amplifier; noise figure; on-chip active inductors; quality factor; silicon area; simulated gain; simulated noise figure; simulation; two stage cascode CMOS low noise amplifier; Active inductors; Active noise reduction; CMOS technology; Circuit noise; Low-noise amplifiers; Optical amplifiers; Optical noise; Radio frequency; Radiofrequency amplifiers; Tunable circuits and devices;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems, 2001. Digest of Papers. 2001 Topical Meeting on
Conference_Location :
Ann Arbor, MI, USA
Print_ISBN :
0-7803-7129-1
DOI :
10.1109/SMIC.2001.942331
