Low voltage high isolation MEMS switches

Author

Blondy, P. ; Cros, D. ; Guillon, P. ; Rey, P. ; Charvet, P. ; Diem, B. ; Zanchi, C. ; Quoirin, J.B.

Author_Institution

Fac. des Sci., IRCOM, Limoges, France

fYear

2001

fDate

14-14 Sept. 2001

Firstpage

47

Lastpage

49

Abstract

This paper describes MEMS thermally actuated RF switches. The switches are constructed using a stress controlled dielectric membrane, with patterned metallic contacts. The structure allows one to build resistive switches at RF frequencies. The process is CMOS compatible and the resulting switches can be easily operated below 5 V. A wafer scale packaging technique has been developed to protect the components during the dicing stage, and for long term durability. Measured performances show 0.25 dB loss for a double series switch and isolation better than 55 dB at 2 GHz.

Keywords

UHF devices; microactuators; micromechanical resonators; microwave switches; semiconductor device packaging; semiconductor device reliability; semiconductor switches; 0.25 dB; 2 GHz; 5 V; CMOS compatible process; MEMS thermally actuated RF switches; dicing stage; double series switch; high isolation MEMS switches; isolation; long term durability; loss; low voltage MEMS switches; measured performances; operating voltages; patterned metallic contacts; resistive switches; stress controlled dielectric membrane; wafer scale packaging technique; Biomembranes; CMOS process; Dielectrics; Low voltage; Micromechanical devices; Microswitches; Radio frequency; Stress control; Switches; Thermal stresses;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Monolithic Integrated Circuits in RF Systems, 2001. Digest of Papers. 2001 Topical Meeting on

Conference_Location

Ann Arbor, MI, USA

Print_ISBN

0-7803-7129-1

Type

conf

DOI

10.1109/SMIC.2001.942339

Filename

942339