Title :
High Q inductors and capacitors on Si substrate
Author :
Jenei, S. ; Decoutere, S. ; Van Huylenbroeck, S. ; Vanhorebeek, G. ; Nauwelaers, B.
Abstract :
In this paper, the impact of conventional silicon technology parameters on the characteristics of passives is studied. For both inductors and capacitors, cost-effective modules, which integrate easily into wiring BEOL (back-end of line) in a conventional silicon technology and provide high Q factor components are presented. For an inductor of 3 nH, designed for 2 GHz frequency applications, and fabricated in thick Cu as an add-on module, Q factor of /spl sim/24 is reached. The metal insulator metal (MIM) capacitor module with outstanding RF performances and a Q factor ranging from 100-1000 in the few GHz frequency range is developed in the Al BEOL. Compact lumped element SPICE models for both components are proposed and verified.
Keywords :
MIM devices; Q-factor; SPICE; UHF integrated circuits; circuit analysis computing; inductors; integrated circuit interconnections; integrated circuit metallisation; modules; thin film capacitors; 2 GHz; Al; Al BEOL; Cu; Q factor; Q factor range; RF performance; Si; Si substrate; add-on module; back-end of line; cost-effective modules; high Q capacitors; high Q inductors; lumped element SPICE models; metal insulator metal capacitor; passive component characteristics; silicon technology parameters; wiring BEOL; BiCMOS integrated circuits; CMOS technology; Capacitors; Costs; Inductors; Metal-insulator structures; Q factor; Radio frequency; Radiofrequency integrated circuits; Silicon;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems, 2001. Digest of Papers. 2001 Topical Meeting on
Conference_Location :
Ann Arbor, MI, USA
Print_ISBN :
0-7803-7129-1
DOI :
10.1109/SMIC.2001.942342
