Title :
Tantalum nitride thin film resistors for integration into copper metallization based RF-CMOS and BiCMOS technology platforms
Author :
Henderson, R. ; Zurcher, P. ; Duvallet, A. ; Happ, C. ; Petras, M. ; Raymond, M. ; Remmel, T. ; Roberts, D. ; Steimle, B. ; Straub, S. ; Sparks, T. ; Tarabbia, M. ; Miller, M.
Author_Institution :
Mater. Struct. Labs., Motorola Inc., Tempe, AZ, USA
Abstract :
Metal thin film resistors have been integrated into a damascene-copper multilayer metallization system for mixed-signal BiCMOS technology platforms. The thin film process can be adjusted to achieve resistors with very low temperature coefficients, high linearity, low noise, and improved matching as compared to resistors based on implanted silicon or polysilicon processing. In addition, improvement in terms of good RF performance was observed.
Keywords :
BiCMOS integrated circuits; CMOS integrated circuits; copper; electron device noise; impedance matching; integrated circuit interconnections; integrated circuit measurement; integrated circuit metallisation; mixed analogue-digital integrated circuits; tantalum compounds; thin film resistors; Cu metallization based BiCMOS technology platform; Cu metallization based RF-CMOS technology platform; Cu-TaN; RF performance; Tantalum nitride thin film resistors; damascene-copper multilayer metallization system; implanted silicon; linearity; metal thin film resistors; mixed-signal BiCMOS technology platforms; noise; polysilicon processing; resistor matching; resistors; temperature coefficients; thin film process; BiCMOS integrated circuits; Copper; Linearity; Metallization; Nonhomogeneous media; Resistors; Semiconductor thin films; Silicon; Temperature; Transistors;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems, 2001. Digest of Papers. 2001 Topical Meeting on
Conference_Location :
Ann Arbor, MI, USA
Print_ISBN :
0-7803-7129-1
DOI :
10.1109/SMIC.2001.942343
