Title :
Behavioral Modeling of The pH-ISFET Temperature Influence
Author :
Hajji, B. ; Naimi, S.E. ; Humenyuk, I. ; Launay, J. ; Temple-Boyer, P.
Author_Institution :
ENSA - Mohammed 1st Univ., Oujda
Abstract :
In this paper, behavioral modeling of the temperature influence on the pH-ISFET response has been presented by using Orcad PSPICE simulator and Matlab software. This model was based on the so-called site-binding model and the level 3 of PSPICE model of MOSFET. It takes into account the dependence with temperature of the dissociation constants ka, kb at the SiO2/Si3N4 electrolyte/insulator interface. The implemented model was tested at different temperatures on a large pH range, evidencing a good fit between simulation results and experimental data.
Keywords :
MOSFET; SPICE; electrolytes; ion sensitive field effect transistors; MOSFET; Matlab software; Oread PSPICE simulator; behavioral modeling; electrolyte-insulator interface; pH-ISFET temperature influence; site-binding model; Biomembranes; Circuit simulation; Electrodes; Insulation; MOSFET circuits; Mathematical model; SPICE; Temperature dependence; Temperature sensors; Virtual colonoscopy;
Conference_Titel :
Electronics, Circuits and Systems, 2007. ICECS 2007. 14th IEEE International Conference on
Conference_Location :
Marrakech
Print_ISBN :
978-1-4244-1377-5
Electronic_ISBN :
978-1-4244-1378-2
DOI :
10.1109/ICECS.2007.4511019
