DocumentCode
3362863
Title
A high speed trans-impedance amplifier using 0.13 μm triple-well CMOS technology
Author
Riahi, Noushin ; Ahmady, Ali Fotowat ; Loh, Lawrence
Author_Institution
Alzahra Univ., Tehran, Iran
Volume
4
fYear
2004
fDate
23-26 May 2004
Abstract
A transimpedance amplifier has been demonstrated for a 10 Gb/s SONET receiver. The shunt feedback transimpedance amplifier is designed in 0.13 μm triple-well CMOS technology. Some new techniques are used to compensate process and temperature variation effects. The feedback resistance of 700 Ω is achieved with a bandwidth of 8.7 GHz.
Keywords
CMOS analogue integrated circuits; SONET; feedback amplifiers; high-speed integrated circuits; integrated circuit design; integrated circuit noise; optical feedback; optical receivers; phase noise; semiconductor optical amplifiers; 0.13 micron; 10 Gbit/s; 700 ohm; 8.7 GHz; SONET receiver; feedback resistance; high speed transimpedance amplifier; shunt feedback transimpedance amplifier; temperature variation effects; triple-well CMOS technology; 1f noise; Bandwidth; CMOS technology; Circuit noise; FETs; Integrated circuit noise; MOSFETs; Optical amplifiers; Resistors; SONET;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems, 2004. ISCAS '04. Proceedings of the 2004 International Symposium on
Print_ISBN
0-7803-8251-X
Type
conf
DOI
10.1109/ISCAS.2004.1328976
Filename
1328976
Link To Document