Title :
High voltage clamped IGBT for automotive ignition applications
Author :
Shen, Z. John ; Robb, Stephen P.
Author_Institution :
Motorola Inc., Phoenix, AZ, USA
Abstract :
A new field-limiting-ring (FLR) concept with variable ring widths is proposed for designing a high voltage collector-gate clamped IGBT. An IGBT based on the new concept has been designed and fabricated with a standard IGBT process flow to provide a clamp voltage of 620 volts. The new high voltage clamped IGBT is to be primarily used in automotive ignition applications
Keywords :
automotive electronics; electric ignition; insulated gate bipolar transistors; power bipolar transistors; semiconductor device models; semiconductor device testing; 620 V; automotive ignition applications; clamp voltage; field-limiting-ring; high voltage clamped IGBT; high voltage collector-gate clamped IGBT; standard IGBT process flow; variable ring width; Automotive engineering; Batteries; Clamps; Coils; Driver circuits; Ignition; Insulated gate bipolar transistors; Plugs; Semiconductor diodes; Voltage;
Conference_Titel :
Power Semiconductor Devices and ICs, 1998. ISPSD 98. Proceedings of the 10th International Symposium on
Conference_Location :
Kyoto
Print_ISBN :
0-7803-4752-8
DOI :
10.1109/ISPSD.1998.702644
