Title :
Model order reduction of on-chip interconnects
Author :
Medhat, Dina ; Hegazi, Emad ; Abdel-Rahman, Mohamed
Author_Institution :
Ain Shams Univ., Cairo, Egypt
Abstract :
In this paper, we describe a methodology for the efficient extraction and model order reduction of large on-chip interconnects. We propose a methodology that results in simulation time reduction by at least an order of magnitude, compared to commercial model order reduction software, by adopting frequency domain vector fitting to reduce the number of poles required to represent the interconnect. The proposed methodology supports multi-port order reduction while assuring passivity of the resulting reduced network. We verify the proposed methodology on an LC voltage controlled oscillator implemented in CMOS technology and extracting parasitic resistances, capacitances, and inductances. Moreover we verify the proposed methodology on a memory design.
Keywords :
CMOS integrated circuits; integrated circuit interconnections; voltage-controlled oscillators; CMOS technology; LC voltage controlled oscillator; frequency domain vector fitting; multiport order reduction; on-chip interconnects; parasitic capacitance; parasitic inductance; parasitic resistance; time reduction; CMOS technology; Capacitance; Circuit simulation; Coupling circuits; Electronic design automation and methodology; Frequency domain analysis; Integrated circuit interconnections; RLC circuits; Semiconductor device modeling; Voltage-controlled oscillators; Accuracy; Algorithms; Calibre; Eldo; Electronic Design Automation (EDA); Performance; Reliability; Spice; Time Constant Equilibration Reduction (TICER); Verification; model order reduction; multi-port; passive; reduction efficiency; vector fitting (VF); voltage controlled oscillator (VCO);
Conference_Titel :
Design and Test Workshop (IDT), 2009 4th International
Conference_Location :
Riyadh
Print_ISBN :
978-1-4244-5748-9
DOI :
10.1109/IDT.2009.5404152