Title :
Measurement and modeling of thermal resistance of high speed SiGe heterojunction bipolar transistors
Author :
Rieh, J.-S. ; Greenberg, D. ; Jagannathan, B. ; Freeman, G. ; Subbanna, S.
Author_Institution :
Commun. Res. & Dev. Center, IBM Corp., Hopewell Junction, NY, USA
Abstract :
Thermal resistance has been measured for high speed SiGe HBTs with various emitter widths and lengths. The smaller devices exhibited higher thermal resistance values, but eventually resulted in lower junction temperature rise for a given power density. A physical model has been developed which showed good agreement with the measurements. The model indicates that the thermal resistance depends strongly on the deep trench geometry. The thermal resistance is also anticipated to increase with the existence of adjacent devices due to a heat dissipation interference, according to the model.
Keywords :
Ge-Si alloys; cooling; heterojunction bipolar transistors; microwave bipolar transistors; semiconductor device measurement; semiconductor device models; semiconductor device packaging; semiconductor materials; thermal management (packaging); thermal resistance; SiGe; deep trench geometry; emitter length; emitter width; heat dissipation interference; high speed SiGe HBTs; high speed SiGe heterojunction bipolar transistors; junction temperature rise; measurement; modeling; physical model; power density; thermal resistance; Electrical resistance measurement; Geometry; Germanium silicon alloys; Length measurement; Resistance heating; Silicon germanium; Solid modeling; Temperature; Thermal resistance; Velocity measurement;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems, 2001. Digest of Papers. 2001 Topical Meeting on
Conference_Location :
Ann Arbor, MI, USA
Print_ISBN :
0-7803-7129-1
DOI :
10.1109/SMIC.2001.942350
