A self-isolated intelligent IGBT for driving ignition coils

Author

Yoshida, K. ; Kudoh, M. ; Takeuchi, S. ; Furuhata, S. ; Fujihira, T.

Author_Institution

Fuji Electr. Co. Ltd., Nagano, Japan

fYear

1998

fDate

3-6 Jun 1998

Firstpage

105

Lastpage

108

Abstract

A self-isolated intelligent IGBT for driving ignition coils has been developed for the first time. The device fits into a TO-220 package and monolithically integrates a vertical IGBT with NMOS driving and protection circuits by adding only 4 mask steps to the standard IGBT process. This intelligent IGBT survives an unclamped inductive switching energy of 300 mJ at T_j=150°C due to an advanced collector-current-ballasting-resistor technique, and it has eliminated the latching problem of parasitic thyristors located at integrated NMOS devices by a new Zener-resistor-networking protection technique. Excellent current-limiting operation under V_GE=3.5 V driving has been realized by newly developed high-frequency gate-decoupling and collector-to-gate resistive feed-back techniques

Keywords

BIMOS integrated circuits; automotive electronics; coils; current limiters; driver circuits; electric ignition; insulated gate bipolar transistors; integrated circuit packaging; isolation technology; power bipolar transistors; power integrated circuits; protection; 150 C; 3.5 V; 300 mJ; NMOS driving circuits; NMOS protection circuits; TO-220 package; Zener-resistor-networking protection technique; collector-current-ballasting-resistor technique; collector-to-gate resistive feedback technique; current-limiting operation; high-frequency gate-decoupling technique; ignition coil driving; ignition coils; integrated NMOS devices; latching; mask steps; monolithic vertical IGBT/NMOS driving/protection circuit integration; parasitic thyristors; self-isolated intelligent IGBT; standard IGBT process; unclamped inductive switching energy; vertical IGBT; Automobiles; Coils; Competitive intelligence; Costs; Electronic ballasts; Ignition; Insulated gate bipolar transistors; MOS devices; Protection; Resistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 1998. ISPSD 98. Proceedings of the 10th International Symposium on

Conference_Location

Kyoto

ISSN

1063-6854

Print_ISBN

0-7803-4752-8

Type

conf

DOI

10.1109/ISPSD.1998.702646

Filename

702646