Title :
In-situ TEM characterization of nanomaterials and devices
Author :
Kim, Moon.J. ; Park, S.Y. ; Cha, D.K. ; Kim, J. ; Floresca, H.C. ; Lu, Ning ; Wang, J.G.
Author_Institution :
Univ. of Texas at Dallas, Richardson, TX, USA
Abstract :
Electrical properties of nano size devices were directly measured by TEM. Real time observation of phase transition behavior in PRAM revealed that the volume of the crystalline phase is the main factor in determining cell resistance. In the transistor device, we have identified the doping type and area by measuring the I-V curve at the individual nano contact on the specimen. The evolution of the graphene edge structure was controlled and monitored at and up to 1200°C in-situ.
Keywords :
electric resistance; electrical conductivity; graphene; nanocontacts; nanostructured materials; phase change memories; semiconductor doping; solid-state phase transformations; transistors; transmission electron microscopy; C; I-V curve; PRAM; TEM characterization; cell resistance; crystalline phase; doping; electrical properties; graphene edge structure; nanocontact; nanomaterials; nanosize device; phase transition; transistor device; Copper; Crystals; Heating; Moon; Switches; Transistors;
Conference_Titel :
Nanotechnology Materials and Devices Conference (NMDC), 2011 IEEE
Conference_Location :
Jeju
Print_ISBN :
978-1-4577-2139-7
DOI :
10.1109/NMDC.2011.6155318
