DocumentCode
3362994
Title
SiGe-Si-based optoelectronic devices for high-speed communication applications
Author
Bhattacharya, P. ; Qasaimeh, O. ; Jae-Sung Rieh
Author_Institution
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
fYear
2001
fDate
14-14 Sept. 2001
Firstpage
135
Lastpage
137
Abstract
The principles and properties of some SiGe-Si-based optoelectronic devices are described. These include photodiodes, photoreceivers and modulators. InGaAs-GaAs quantum dot lasers grown directly on Si also exhibit promising characteristics.
Keywords
Ge-Si alloys; III-V semiconductors; elemental semiconductors; gallium arsenide; indium compounds; optical communication equipment; optical modulation; optical receivers; photodiodes; quantum well lasers; semiconductor materials; semiconductor quantum dots; silicon; InGaAs-GaAs; InGaAs-GaAs quantum dot lasers; Si; SiGe-Si; SiGe-Si-based optoelectronic devices; direct laser growth; high-speed communication applications; modulators; photodiodes; photoreceivers; Bandwidth; Diodes; Gallium arsenide; Germanium silicon alloys; Heterojunction bipolar transistors; Optical amplifiers; Optoelectronic devices; Photodiodes; Silicon germanium; Solids;
fLanguage
English
Publisher
ieee
Conference_Titel
Silicon Monolithic Integrated Circuits in RF Systems, 2001. Digest of Papers. 2001 Topical Meeting on
Conference_Location
Ann Arbor, MI, USA
Print_ISBN
0-7803-7129-1
Type
conf
DOI
10.1109/SMIC.2001.942354
Filename
942354
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