38 GHz coplanar harmonic mixer on silicon

Author

Weiwei Zhao ; Schollhorn, C. ; Kasper, E. ; Rheinfelder, C.

Author_Institution

Inst. fur Halbleitertech., Stuttgart Univ., Germany

fYear

2001

fDate

14-14 Sept. 2001

Firstpage

138

Lastpage

141

Abstract

A 38 GHz coplanar 8th harmonic mixer operating as a down converter on high resistivity FZ (float zone) silicon is realized. Two aluminum metal layers are used. Instead of air bridges, MIM (metal insulator metal) connections between the ground planes are used. The harmonic mixer was realized as a single balanced mixer with two flip chip bonded double Schottky diodes. The mixer works at the 8th harmonic frequency of the LO signal (4.6 GHz). With an RF frequency of 38 GHz this leads to an IF frequency of 1.2 GHz. A minimal conversion loss of 23 dB for a LO power about 20 dBm was achieved.

Keywords

MIM structures; MMIC frequency convertors; MMIC mixers; Schottky diode mixers; coplanar waveguides; flip-chip devices; harmonics; integrated circuit metallisation; millimetre wave frequency convertors; millimetre wave mixers; semiconductor device packaging; 1.2 GHz; 23 dB; 38 GHz; 4.6 GHz; Al; IF frequency; LO power; LO signal; MIM connections; RF frequency; Si; air bridges; aluminum metal layers; coplanar eighth harmonic mixer; coplanar harmonic mixer; down converter operation; flip chip bonded double Schottky diodes; float zone silicon; ground planes; harmonic frequency; harmonic mixer; metal insulator metal connections; minimal conversion loss; resistivity; silicon; single balanced mixer; Aluminum; Bonding; Bridges; Conductivity; Flip chip; Frequency; Insulation; Metal-insulator structures; Mixers; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Monolithic Integrated Circuits in RF Systems, 2001. Digest of Papers. 2001 Topical Meeting on

Conference_Location

Ann Arbor, MI, USA

Print_ISBN

0-7803-7129-1

Type

conf

DOI

10.1109/SMIC.2001.942355

Filename

942355