Title :
Resonance phase transistor-concepts and perspectives
Author :
Jorke, H. ; Schafer, M. ; Luy, J.-F.
Author_Institution :
Res. Center, Daimler-Chrysler AG, Ulm, Germany
Abstract :
Two concepts for creation of a negative output resistance three-terminal device by shifting the collector current phase in excess of /spl pi/ are investigated. With the concept of counter-phase injection, which exploits resonant tunneling, the three-terminal device shows a negative output resistance in the whole frequency range up to a cut-off frequency. In contrast, with the concept of delayed injection using a more conventional bipolar transistor structure, the negative output resistance is found to be confined to a frequency band. In both transistor types, the magnitude of the negative output resistances are comparable. In addition, high current effects are investigated by numerical simulation in the delayed injection transistor.
Keywords :
bipolar transistors; microwave transistors; millimetre wave transistors; negative resistance devices; numerical analysis; resonant tunnelling transistors; semiconductor device models; bipolar transistor structure; collector current phase shift; counter-phase injection; cut-off frequency; delayed injection; delayed injection transistor; frequency band confined negative resistance; frequency range; high current effects; negative output resistance; negative output resistance magnitude; negative output resistance three-terminal device; numerical simulation; resonance phase transistor; resonant tunneling; three-terminal device; Bipolar transistors; Cutoff frequency; Delay effects; Equivalent circuits; Fabrication; Numerical simulation; Oscillators; Power generation; Resonance; Resonant tunneling devices;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems, 2001. Digest of Papers. 2001 Topical Meeting on
Conference_Location :
Ann Arbor, MI, USA
Print_ISBN :
0-7803-7129-1
DOI :
10.1109/SMIC.2001.942357
