Title :
Structure dependence of the characteristics of SiGe varactor fabricated by RPCVD
Author :
Mheen, B. ; Dongwoo Suh ; Jin-Yeoung Kang
Author_Institution :
Dept. of Compound Semicond., Electron. & Telecommun. Res. Inst., Taejon, South Korea
Abstract :
Two high quality on-chip varactors were developed using a SiGe HBT process. The epitaxial layers of the varactor were grown by reduced pressure chemical vapor deposition (RPCVD) and the overall sequence followed a standard silicon process. The new varactors showed higher normalized Q factors (100 and 160 at 2.5 GHz) than that of a conventional SiGe bipolar varactor (70 at 2.5 GHz), although they suffered small variance of capacitance when the Q factor was high and vice versa. More details of measurement and analysis were presented based on the structural characteristics of the varactors.
Keywords :
Ge-Si alloys; Q-factor; UHF devices; capacitance; chemical vapour deposition; semiconductor device measurement; semiconductor growth; semiconductor materials; vapour phase epitaxial growth; varactors; 2.5 GHz; RPCVD; SiGe; SiGe HBT process; SiGe bipolar varactor; SiGe varactor; capacitance variance; characteristics structure dependence; device measurement; epitaxial layers; normalized Q factors; on-chip varactors; reduced pressure chemical vapor deposition; silicon process sequence; structural characteristics; Capacitance; Electrodes; Epitaxial layers; Germanium silicon alloys; Heterojunction bipolar transistors; Phase noise; Q factor; Silicon germanium; Varactors; Voltage-controlled oscillators;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems, 2001. Digest of Papers. 2001 Topical Meeting on
Conference_Location :
Ann Arbor, MI, USA
Print_ISBN :
0-7803-7129-1
DOI :
10.1109/SMIC.2001.942358
