Title :
CMOS inverters based high frequency voltage controlled sinusoidal oscillator
Author :
Barthélemy, H. ; Bourdel, S. ; Gaubert, J. ; Battista, M.
Author_Institution :
IMT Technopole de Chateau Gombert, Marseille
Abstract :
A novel sinusoidal VCO using six digital CMOS inverters is presented in this paper. Simulation with BSIM3V3 parameters of a typical CMOS 0.35 ¿m process indicates oscillations from 1.28GHz to 1.46GHz. Using two additional capacitances about 300fF, the corresponding frequency range is 491MHz-562MHz. The equivalent total power consumption in both cases is lower than 11mW. For 1.4GHz oscillation, the simulated phase noise at ¿F=1MHz is lower than - 94dBc/Hz. The proposed circuit operation has been acted from measurements with the commercial HEF4069UBP from Philips semiconductors [1].
Keywords :
CMOS integrated circuits; integrated circuit modelling; invertors; voltage-controlled oscillators; CMOS inverters; equivalent total power consumption; frequency 1.28 GHz to 1.46 GHz; frequency 491 MHz to 562 MHz; high frequency voltage controlled sinusoidal oscillator; size 0.35 mum; CMOS process; Capacitance; Circuit simulation; Energy consumption; Frequency; Inverters; Noise measurement; Phase noise; Voltage control; Voltage-controlled oscillators;
Conference_Titel :
Electronics, Circuits and Systems, 2007. ICECS 2007. 14th IEEE International Conference on
Conference_Location :
Marrakech
Print_ISBN :
978-1-4244-1377-5
Electronic_ISBN :
978-1-4244-1378-2
DOI :
10.1109/ICECS.2007.4511036
