CMOS inverters based high frequency voltage controlled sinusoidal oscillator

Author

Barthélemy, H. ; Bourdel, S. ; Gaubert, J. ; Battista, M.

Author_Institution

IMT Technopole de Chateau Gombert, Marseille

fYear

2007

fDate

11-14 Dec. 2007

Firstpage

490

Lastpage

493

Abstract

A novel sinusoidal VCO using six digital CMOS inverters is presented in this paper. Simulation with BSIM3V3 parameters of a typical CMOS 0.35 Â¿m process indicates oscillations from 1.28GHz to 1.46GHz. Using two additional capacitances about 300fF, the corresponding frequency range is 491MHz-562MHz. The equivalent total power consumption in both cases is lower than 11mW. For 1.4GHz oscillation, the simulated phase noise at Â¿F=1MHz is lower than - 94dBc/Hz. The proposed circuit operation has been acted from measurements with the commercial HEF4069UBP from Philips semiconductors [1].

Keywords

CMOS integrated circuits; integrated circuit modelling; invertors; voltage-controlled oscillators; CMOS inverters; equivalent total power consumption; frequency 1.28 GHz to 1.46 GHz; frequency 491 MHz to 562 MHz; high frequency voltage controlled sinusoidal oscillator; size 0.35 mum; CMOS process; Capacitance; Circuit simulation; Energy consumption; Frequency; Inverters; Noise measurement; Phase noise; Voltage control; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics, Circuits and Systems, 2007. ICECS 2007. 14th IEEE International Conference on

Conference_Location

Marrakech

Print_ISBN

978-1-4244-1377-5

Electronic_ISBN

978-1-4244-1378-2

Type

conf

DOI

10.1109/ICECS.2007.4511036

Filename

4511036