DocumentCode :
3363273
Title :
1.4 kV 4H-SiC UMOSFET with low specific on-resistance
Author :
Sugawara, Yoshitaka ; Asano, Katsunori
Author_Institution :
Kansai Electr. Power Co. Inc., Hyogo, Japan
fYear :
1998
fDate :
3-6 Jun 1998
Firstpage :
119
Lastpage :
122
Abstract :
A device concept for an SiC MOSFET of 5 kV·3 kA class is proposed. As the first step in developing the device, a 2 kV SiC UMOSFET with a punch-through structure has been designed and fabricated. The fabricated UMOSFET has a high breakdown voltage of 1.4 kV and a low specific on-resistance of 311 mΩ.cm2 at room temperature, and surpasses Si´s theoretical limit of relationships between breakdown voltage and specific on-resistance
Keywords :
electric breakdown; electric resistance; power MOSFET; semiconductor device testing; semiconductor materials; silicon compounds; 1.4 kV; 2 kV; 3 kA; 4H-SiC UMOSFET; 5 kV; SiC; SiC MOSFET; SiC UMOSFET; breakdown voltage; punch-through structure; specific on-resistance; Crystals; Current density; Diodes; Fabrication; MOSFET circuits; Packaging; Silicon carbide; Temperature; Thermal conductivity; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Semiconductor Devices and ICs, 1998. ISPSD 98. Proceedings of the 10th International Symposium on
Conference_Location :
Kyoto
ISSN :
1063-6854
Print_ISBN :
0-7803-4752-8
Type :
conf
DOI :
10.1109/ISPSD.1998.702650
Filename :
702650
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3363273
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