Title :
20 mW SiGe-MMIC-VCO at 5 GHz with integrated 4:1 divider for use in a PLL
Author :
Abele, P. ; Vogelmann, H. ; Sonmez, E. ; Schad, K.-B. ; Schumacher, H.
Author_Institution :
Dept. of Electron. Devices & Circuits, Ulm Univ., Germany
Abstract :
A 5 GHz SiGe MMIC-VCO with integrated 4:1 divider and an output power of more than 20 mW is presented. The VCO core has a differential topology with two buffered outputs. One output is connected to a 4:1 divider realized in ECL configuration and the other to an amplifier having 20 mW output power at 50 /spl Omega/. The 4:1 divider has a differential output and can be connected directly to a synthesizer IC with differential input to build up a PLL. The tuning range of the VCO is 700 MHz between a control voltage of 0 and 5 V. The variation of the output power is less than 1 dB over the whole tuning range. The total chip size is 800/spl times/400 /spl mu/m/sup 2/.
Keywords :
Ge-Si alloys; MMIC frequency convertors; MMIC oscillators; circuit tuning; frequency dividers; integrated circuit measurement; phase locked loops; semiconductor materials; voltage-controlled oscillators; 0 to 5 V; 20 mW; 400 micron; 5 GHz; 50 ohm; 800 micron; ECL divider configuration; PLL; SiGe; SiGe-MMIC-VCO; VCO core differential topology; VCO tuning range; amplifier output power; buffered outputs; control voltage; differential input; differential output; integrated divider; output power; synthesizer IC; total chip size; Germanium silicon alloys; Integrated circuit synthesis; Phase locked loops; Power amplifiers; Power generation; Silicon germanium; Synthesizers; Topology; Voltage control; Voltage-controlled oscillators;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems, 2001. Digest of Papers. 2001 Topical Meeting on
Conference_Location :
Ann Arbor, MI, USA
Print_ISBN :
0-7803-7129-1
DOI :
10.1109/SMIC.2001.942370
