Title :
Driving and protecting the latest high voltage and current power MOS and IGBTs
Author :
Ochi, Sam ; Zommer, Nathan
Author_Institution :
IXYS Corp., San Jose, CA, USA
Abstract :
The new smart high-voltage gate drivers, the IXBD4410 and the IXBD4411, were designed to drive and protect power MOS and insulated gate bipolar transistor (IGBT) devices and modules in a phase leg or a totem pole inverter output configuration. These gate drivers function reliably under extreme dν/dt and di/dt noise environments, with the half bridge inverter output voltages limited only by the breakdown of the external discrete devices. The IXBD4410 provides a diagnostic fault output flag, reflecting the condition of not only the low side but the high side device in a half bridge application. The IXBD4410 family devices can be configured to detect operating overcurrents using a resistor in series with the power device source, or by using one of several desaturation sense circuits presented. If the drive current output of the IXBD4410 is not adequate, a simple circuit consisting of a pair of complementary bipolar transistors can be placed between the IXBD4410 family device and the power MOS, IGBT, or module
Keywords :
driver circuits; insulated gate bipolar transistors; invertors; metal-insulator-semiconductor devices; power transistors; protection; HV; IGBT; IXBD4410; IXBD4411; MOS devices; application; breakdown; complementary bipolar transistors; desaturation sense circuits; diagnostic fault output flag; gate drivers; half bridge; insulated gate bipolar transistor; overcurrents; phase leg invertor; power transistors; protection; totem pole inverter; Breakdown voltage; Bridge circuits; Circuit faults; Driver circuits; Insulated gate bipolar transistors; Inverters; Leg; Protection; Resistors; Working environment noise;
Conference_Titel :
Industry Applications Society Annual Meeting, 1992., Conference Record of the 1992 IEEE
Conference_Location :
Houston, TX
Print_ISBN :
0-7803-0635-X
DOI :
10.1109/IAS.1992.244410
