Title :
Metamorphic InGaAs/AlInAs heterostructure field effect transistors: layer growth, device processing and performance
Author_Institution :
Inst. d´´Electron. et de Microelectron., CNRS, Villeneuve d´´Ascq, France
Abstract :
This paper presents an overview of metamorphic (or strain relaxed) InGaAs/AlInAs heterostructure field effect transistors. The growth of the metamorphic layer and its characterization in terms of structural and electrical properties are presented in a first part. The device processing and device performance are successively described in a second part. The device performance is compared with the state of the art performance of pseudomorphic HFET on GaAs and lattice matched HFET on InP. The interest and the potential applications of the metamorphic HFET are then given in conclusion
Keywords :
III-V semiconductors; aluminium compounds; characteristics measurement; gallium arsenide; high electron mobility transistors; indium compounds; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; HEMTs; InGaAs-AlInAs; MBE layer growth; device performance; device processing; electrical properties; heterostructure field effect transistors; metamorphic devices; strain relaxed devices; Electrons; Gallium arsenide; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; Lattices; MODFETs; Photonic band gap; Substrates;
Conference_Titel :
Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on
Conference_Location :
Schwabisch-Gmund
Print_ISBN :
0-7803-3283-0
DOI :
10.1109/ICIPRM.1996.491919
