Title :
Gate drive considerations for IGBT modules
Author :
Chokhawala, Rahul ; Catt, Jamie ; Pelly, Brian
Author_Institution :
Int. Rectifier Corp., Los Angeles, CA, USA
Abstract :
The switching performance of an insulated gate bipolar transistor (IGBT) module depends on the drive circuit characteristics and external DC loop inductance. The authors discuss the influence of these parameters on switching losses, diode recovery, switching voltage transients, short-circuit operation, and dν/dt induced current. The present work is tutorial and identifies trends. It is intended to help the circuit designer to apply the IGBT module to best advantage
Keywords :
driver circuits; insulated gate bipolar transistors; losses; semiconductor switches; transients; IGBT; dν/dt induced current; diode recovery; external DC loop inductance; gate drives; insulated gate bipolar transistor; losses; semiconductor switches; short-circuit operation; switching performance; voltage transients; Circuit testing; Diodes; Inductance; Insulated gate bipolar transistors; MOSFETs; Protection; Rectifiers; Switching circuits; Switching loss; Voltage;
Conference_Titel :
Industry Applications Society Annual Meeting, 1992., Conference Record of the 1992 IEEE
Conference_Location :
Houston, TX
Print_ISBN :
0-7803-0635-X
DOI :
10.1109/IAS.1992.244411
