• DocumentCode
    3363365
  • Title

    Gate drive considerations for IGBT modules

  • Author

    Chokhawala, Rahul ; Catt, Jamie ; Pelly, Brian

  • Author_Institution
    Int. Rectifier Corp., Los Angeles, CA, USA
  • fYear
    1992
  • fDate
    4-9 Oct 1992
  • Firstpage
    1186
  • Abstract
    The switching performance of an insulated gate bipolar transistor (IGBT) module depends on the drive circuit characteristics and external DC loop inductance. The authors discuss the influence of these parameters on switching losses, diode recovery, switching voltage transients, short-circuit operation, and dν/dt induced current. The present work is tutorial and identifies trends. It is intended to help the circuit designer to apply the IGBT module to best advantage
  • Keywords
    driver circuits; insulated gate bipolar transistors; losses; semiconductor switches; transients; IGBT; dν/dt induced current; diode recovery; external DC loop inductance; gate drives; insulated gate bipolar transistor; losses; semiconductor switches; short-circuit operation; switching performance; voltage transients; Circuit testing; Diodes; Inductance; Insulated gate bipolar transistors; MOSFETs; Protection; Rectifiers; Switching circuits; Switching loss; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Industry Applications Society Annual Meeting, 1992., Conference Record of the 1992 IEEE
  • Conference_Location
    Houston, TX
  • Print_ISBN
    0-7803-0635-X
  • Type

    conf

  • DOI
    10.1109/IAS.1992.244411
  • Filename
    244411
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3363365