Title :
Equation for terminal volt-ampere characteristics of MOS-controlled thyristors
Author :
Czarkowski, Dariusz ; Kazimierczuk, Marian K.
Author_Institution :
Dept. of Electr. Eng., Wright State Univ., Dayton, OH, USA
Abstract :
An equation for the iK-νAK static characteristic of an MOS-controlled thyristor (MCT) is derived using a four-transistor equivalent model of the device. The equation is similar to that for forward-biased diodes. The equivalent saturation current of the MCT is a function of both the saturation currents and the forward and reverse current gains of the npn and pnp bipolar transistors. Effects of these parameters on the MCT equivalent saturation current are investigated. Voltages and currents of all transistors that form the MCT equivalent model are simulated using SPICE to explain the behavior of the device in the forward-biased region. Finally, the experimentally iK-νAK characteristics are presented. The calculated and measured i K-νAK characteristics were in good agreement. The measured on-voltage drop was 1.6 V at a cathode current of 200 A and a temperature of 300 K
Keywords :
SPICE; digital simulation; equivalent circuits; metal-insulator-semiconductor devices; semiconductor device models; thyristors; 1.6 V; 200 A; 300 K; I-V characteristics; MOS-controlled thyristors; SPICE; bipolar transistors; cathode; current gains; digital simulation; forward bias; four-transistor equivalent model; on-voltage drop; saturation current; semiconductor device models; Bipolar transistors; Cathodes; Current measurement; Diodes; Equations; MOSFETs; SPICE; Temperature; Thyristors; Voltage;
Conference_Titel :
Industry Applications Society Annual Meeting, 1992., Conference Record of the 1992 IEEE
Conference_Location :
Houston, TX
Print_ISBN :
0-7803-0635-X
DOI :
10.1109/IAS.1992.244415
