Sub-20nm Surrounding-Gate Bridge-Channel MOSFETs for Low Power and High Performance Applications

Author

Yun, Eun Jung ; Lee, Sung-Young ; Kim, Min Sang ; Kim, Sung Min ; Choi, Inhyuk ; Lee, Jimyoung ; Park, Bork Kyoung ; Kim, Dong-Won ; Park, Donggun

Author_Institution

Semicond. R&D Center, Yongin City

fYear

2007

fDate

May 30 2007-June 1 2007

Firstpage

1

Lastpage

4

Abstract

We compared electrical characteristics of TBCFET (Triple-Bridge-Channel MOSFET), MBCFET (Multi-Bridge-Channel MOSFET) and SBCFET (Single-Bridge-Channel MOSFET) with sub-20 nm gates. TBCFET is suitable for low-power application with 2.9 mA/um of on-state current and SNM (static noise margin) of 320 mV even at V_dd = 0.8V MBCFET and SBCFET, that are applicable to high-performance devices, show 4.17 mA/um and 2.16 mA/um of on-state currents at V^ = 1.0 V, respectively.

Keywords

MOSFET; bridge circuits; MBCFET; SBCFET; SNM; TBCFET; low power-high performance application; multibridge-channel MOSFET; single-bridge-channel MOSFET; size 20 nm; static noise margin; sub20nm surrounding-gate bridge-channel MOSFET; triple-bridge-channel MOSFET; voltage 0.8 V; voltage 1.0 V; voltage 320 mV; CMOS process; CMOS technology; Electric variables; Etching; Fabrication; Fluctuations; Germanium silicon alloys; MOSFETs; Research and development; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Integrated Circuit Design and Technology, 2007. ICICDT '07. IEEE International Conference on

Conference_Location

Austin, TX

Print_ISBN

1-4244-0757-5

Electronic_ISBN

1-4244-0757-5

Type

conf

DOI

10.1109/ICICDT.2007.4299545

Filename

4299545