Title :
A novel power GTO thyristor
Author :
Silard, Andrei P. ; Duta, Miron J. ; Cercelaru, Sever ; Udrea, Florin
Author_Institution :
Dept. of Electron., Bucharest Polytech. Inst., Romania
Abstract :
A novel concept for gate turn-off thyristors (GTOs) is presented. Unlike the conventional GTOs, the new device is fabricated on lightly doped p-substrate and is therefore called the p-GTO. This device has a high gate cathode breakdown voltage, BVGK. Thus, the limitation imposed by the parameter BVGK on the gated turn-off of GTOs is lifted. The device also features the coexistence of anode shorts with reverse blocking capability, and direct access to the wide (p) base
Keywords :
thyristors; anode shorts; gate cathode breakdown voltage; gate turn-off thyristors; gated turn-off; p-substrate; power GTO thyristor; reverse blocking; semiconductor doping; Anodes; Avalanche breakdown; Boron alloys; Breakdown voltage; Cathodes; Conductivity; Doping; Force control; Thyristors; Voltage control;
Conference_Titel :
Industry Applications Society Annual Meeting, 1992., Conference Record of the 1992 IEEE
Conference_Location :
Houston, TX
Print_ISBN :
0-7803-0635-X
DOI :
10.1109/IAS.1992.244418
