Title :
MRAM Memory for Embedded and Stand Alone Systems
Author :
Durlam, M. ; Chung, Y. ; DeHerrera, M. ; Engel, B.N. ; Grynkewich, G. ; Martino, B. ; Nguyen, B. ; Salter, J. ; Shah, P. ; Slaughter, J.M.
Author_Institution :
Freescale Semicond. Inc., Chandler
fDate :
May 30 2007-June 1 2007
Abstract :
Magnetoresistive random access memory (MRAM) is based on magnetic tunnel junction devices integrated with standard CMOS resulting in high-speed read and write, unlimited endurance, and the highest reliability of any non-volatile memory. MRAM is a unique memory technology in that the module is inserted late in the manufacturing process, making MRAM highly compatible with advanced processing. The manufacturing flexibility of MRAM makes it an attractive choice for embedded and stand alone memory systems.
Keywords :
CMOS memory circuits; embedded systems; integrated circuit reliability; magnetic storage; magnetic tunnelling; magnetoelectronics; magnetoresistive devices; random-access storage; CMOS; MRAM memory; embedded systems; magnetic tunnel junction devices; magnetoresistive random access memory; manufacturing flexibility; nonvolatile memory reliability; stand alone systems; CMOS technology; Magnetic devices; Magnetic flux; Magnetic semiconductors; Magnetic tunneling; Manufacturing processes; Nonvolatile memory; Polarization; Read-write memory; Tunneling magnetoresistance;
Conference_Titel :
Integrated Circuit Design and Technology, 2007. ICICDT '07. IEEE International Conference on
Conference_Location :
Austin, TX
Print_ISBN :
1-4244-0757-5
Electronic_ISBN :
1-4244-0757-5
DOI :
10.1109/ICICDT.2007.4299546
