30GHz Amplifiers with 0.25μm SiGe BiCMOS

Author

Torres, Jackeline Abad ; Vaz, J.C. ; Freire, J.C.

Author_Institution

Inst. de Telecomunicacoes & Inst. Mil. dos Pupilos do Exercito Lisboa, Lisbon

fYear

2007

fDate

11-14 Dec. 2007

Firstpage

578

Lastpage

581

Abstract

In this paper the possibility of using a low cost SiGe:C BiCMOS technology dedicated to few GHz applications up to 30 GHz is discussed. Spiral inductors with SRF higher than 30 GHz, are not available at the foundry library. Accordingly, inductors with a SRF higher than 45 GHz were obtained, however their Q is only 5 at 30 GHz. The test and modeling technique is presented. The design, implementation and test of a two stages common emitter amplifier without inductors are also presented. It has a 8 dB gain at 28 GHz and 1 dB bandwidth from 5 to 10 GHz with a maximum gain of 23 dB (best frequency range for this technology). The return losses are better then 10 dB from 10 to 35 GHz.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; microwave amplifiers; semiconductor materials; silicon compounds; BiCMOS; SiGe; common emitter amplifier; frequency 45 GHz; frequency 5 GHz to 35 GHz; gain 10 dB; gain 23 dB; gain 8 dB; modeling technique; return losses; size 0.25 μm; spiral inductors; BiCMOS integrated circuits; Costs; Foundries; Gain; Germanium silicon alloys; Inductors; Libraries; Silicon germanium; Spirals; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics, Circuits and Systems, 2007. ICECS 2007. 14th IEEE International Conference on

Conference_Location

Marrakech

Print_ISBN

978-1-4244-1377-5

Electronic_ISBN

978-1-4244-1378-2

Type

conf

DOI

10.1109/ICECS.2007.4511057

Filename

4511057