Title :
Importance of Oxygen Vacancies in High K Gate Dielectrics
Author :
Robertson, John ; Xiong, Ka ; Tse, Koon-Yiu
Author_Institution :
Cambridge Univ., Cambridge
fDate :
May 30 2007-June 1 2007
Abstract :
High dielectric constant (K) gate dielectrics have been intensively developed to overcome problems of transient charge trapping, threshold voltage shifts and Fermi level pinning of the gate electrode. Most of these problems can be traced to the effect of oxygen vacancies, whose role is summarized in this paper.
Keywords :
dielectric materials; electrodes; permittivity; Fermi level pinning; gate electrode; high K gate dielectrics; high dielectric constant; oxygen vacancies; threshold voltage shifts; transient charge trapping; Annealing; Degradation; Dielectric constant; Electrodes; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; Oxygen; Scattering; Threshold voltage; high K oxide; metal gate; oxygen vacancy; work function;
Conference_Titel :
Integrated Circuit Design and Technology, 2007. ICICDT '07. IEEE International Conference on
Conference_Location :
Austin, TX
Print_ISBN :
1-4244-0757-5
Electronic_ISBN :
1-4244-0757-5
DOI :
10.1109/ICICDT.2007.4299548
