Title :
Anomalous optical behaviour of LT-AlInAs related to anisotropic composition modulation
Author :
Béarzi, E. ; Benyattou, T. ; Guillot, G. ; Marty, O. ; Pitaval, M. ; Oustric, M. ; Gendry, M. ; Hollinger, G. ; Harmand, J.C. ; Quillec, M.
Author_Institution :
Inst. Nat. des Sci. Appliquees, Villeurbanne, France
Abstract :
Optical measurements and Transmission Electron Microscopy (TEM) were performed on Low Temperature (LT)-AlInAs layers grown by MBE at 400°C and compared with AlInAs grown at 530°C. An anisotropic composition modulation is observed along the [1-10] direction for the low temperature samples. We studied the effects of the V-III BEP ratio on this modulation to explain the LT-AlInAs optical properties
Keywords :
III-V semiconductors; aluminium compounds; indium compounds; molecular beam epitaxial growth; optical properties; photoluminescence; semiconductor epitaxial layers; semiconductor growth; transmission electron microscopy; 400 C; 530 C; AlInAs; AlInAs optical properties; MBE growth; PL spectra; TEM; V-III BEP ratio; anisotropic composition modulation; anomalous optical behaviour; beam equivalent pressure ratio; low temperature AlInAs layers; optical measurements; transmission electron microscopy; Anisotropic magnetoresistance; Geometrical optics; Molecular beam epitaxial growth; Optical microscopy; Optical modulation; Optical sensors; Optical superlattices; Performance evaluation; Phase modulation; Transmission electron microscopy;
Conference_Titel :
Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on
Conference_Location :
Schwabisch-Gmund
Print_ISBN :
0-7803-3283-0
DOI :
10.1109/ICIPRM.1996.491923
