Title :
A Model for Negative Bias Temperature Instability in Oxide and High κ pFETs
Author_Institution :
T. J. Watson Res. Center, Yorktown Heights
fDate :
May 30 2007-June 1 2007
Abstract :
A model for the negative bias temperature instability (NBTI) is proposed. Unlike previous empirical models, this model is derived from physics principles. The model attributes NBTI to de-passivation of SiO2/Si interface and its two distinguishing features are: application of statistical mechanics to calculate de-passivated site density increase as a function of stressing conditions and the assumption that the hydrogen diffusion in oxide is dispersive. The model is verified using published NBTI data for SiO2/poly, SiON/W and HfO2/W pFETs. A comparison between high κ and conventional oxide is made.
Keywords :
field effect integrated circuits; field effect transistors; SiO2-Si; depassivated site density; depassivation; field effect transistor; hydrogen diffusion; negative bias temperature instability; statistical mechanics; stressing condition; Dispersion; Electron traps; Equations; High K dielectric materials; High-K gate dielectrics; Hydrogen; Negative bias temperature instability; Niobium compounds; Protons; Titanium compounds; Model; NBTI; high k/metal gate pFETs; oxide pFETs;
Conference_Titel :
Integrated Circuit Design and Technology, 2007. ICICDT '07. IEEE International Conference on
Conference_Location :
Austin, TX
Print_ISBN :
1-4244-0756-7
Electronic_ISBN :
1-4244-0757-5
DOI :
10.1109/ICICDT.2007.4299550
