Title :
Temperature variation effects on the switching characteristics of bipolar mode FETs (BMFETs)
Author :
Menhart, S. ; Hudgins, J.L. ; Godbold, C.V. ; Portnoy, W.M.
Author_Institution :
Dept. of Eng. Technol., Arkansas Univ., Little Rock, AK, USA
Abstract :
The switching performance of a bipolar mode FET (BMFET) is examined and measured over a temperature range from -184°C to +197°C. Data are presented which show the temperature variation of the rise and fall times, for both the current and voltage; the measured temperature dependence of the forward voltage drop is also presented. These data show that overall device switching performance is not improved for low temperature operation and is degraded at temperatures above room temperature
Keywords :
field effect transistors; semiconductor device testing; semiconductor switches; switching circuits; thermal analysis; -184 degC to 197 degC; BMFETs; I-V characteristics; bipolar mode FETs; fall times; forward voltage drop; performance; rise times; semiconductor device testing; switching characteristics; temperature dependence; thermal analysis; Circuit testing; Current measurement; Degradation; Electric variables measurement; FETs; Flexible printed circuits; Temperature dependence; Temperature distribution; Temperature measurement; Voltage measurement;
Conference_Titel :
Industry Applications Society Annual Meeting, 1992., Conference Record of the 1992 IEEE
Conference_Location :
Houston, TX
Print_ISBN :
0-7803-0635-X
DOI :
10.1109/IAS.1992.244421
