Title :
Liquid phase epitaxial growth of perovskite (Bi,Na)TiO3 and solid solutions on SrTiO3 (001) substrates
Author :
Ohashi, N. ; Soukhojak, A.N. ; Farrey, G.W. ; Sheets, S.A. ; Chiang, Y.M.
Author_Institution :
Dept. of Mater. Sci. & Eng., MIT, Cambridge, MA, USA
Abstract :
Perovskite oxides of (Bi,Na)TiO3 (BNT) and its solid solutions are possible substitutes for lead oxide based actuator materials. In this study, pure and doped BNT single crystals were grown on the (001) face of SrTiO3 (ST) single crystal substrates in order to optimize the conditions for liquid phase epitaxial (LPE) growth. X-ray diffraction (XRD) indicated an epitaxial relationship between the grown NBT and ST substrates, with the a-axis of BNT (both tetragonal and rhombohedral) along a-axis of the ST substrates. Line broadening of the XRD pattern due to lattice mismatch was also observed. Polarized optical microscopy revealed that 90° domains were formed in the as-grown crystals. EDS mapping analyses indicated that interface between grown NBT and ST was compositionally sharp. After removing the substrates, electromechanical constants were evaluated
Keywords :
X-ray diffraction; bismuth compounds; electric domains; electromechanical effects; epitaxial layers; ferroelectric materials; ferroelectric thin films; liquid phase epitaxial growth; optical microscopy; sodium compounds; solid solutions; (Bi,Na)TiO3; (BiNa)TiO3; BNT single crystals; SrTiO3; SrTiO3 (001) substrates; X-ray diffraction; XRD; XRD pattern; a-axis; broadening; domains; electromechanical constants; epitaxial relationship; ferroelectric relaxor; lattice mismatch; liquid phase epitaxial growth; perovskite; polarized optical microscopy; solid solutions; Actuators; Crystalline materials; Crystals; Epitaxial growth; Lead compounds; Optical microscopy; Solids; Substrates; X-ray diffraction; X-ray scattering;
Conference_Titel :
Applications of Ferroelectrics, 2000. ISAF 2000. Proceedings of the 2000 12th IEEE International Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
0-7803-5940-2
DOI :
10.1109/ISAF.2000.942381
