• DocumentCode
    3363581
  • Title

    Demonstration of OSAT compatible 300 mm through Si interposer

  • Author

    Ding, Lixin ; Liew, Linda ; Guan Kian Lau ; Hongyu Li ; Mingbin Yu ; Lo, G.Q.

  • Author_Institution
    Inst. of Microelectron., A*STAR (Agency for Sci., Technol. & Res.), Singapore, Singapore
  • fYear
    2013
  • fDate
    11-13 Dec. 2013
  • Firstpage
    430
  • Lastpage
    434
  • Abstract
    We demonstrated fine pitch TSV interposer (TSI) with OSAT-only infra-structure. This provides an alternative commercial worth technology path given that OSAT can also offer a turnkey solution making 300 mm fine pitch TSV interposer. A comprehensive fabrication and characterization has been presented for process modules, integration, and fabricated interposers.
  • Keywords
    elemental semiconductors; fine-pitch technology; silicon; three-dimensional integrated circuits; vias; OSAT-only infrastructure; Si; fine pitch TSV interposer; process modules; size 300 mm; three-dimensional integrated circuits; Etching; Fabrication; Foundries; Lithography; Resistance; Through-silicon vias; Wiring;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronics Packaging Technology Conference (EPTC 2013), 2013 IEEE 15th
  • Conference_Location
    Singapore
  • Print_ISBN
    978-1-4799-2832-3
  • Type

    conf

  • DOI
    10.1109/EPTC.2013.6745757
  • Filename
    6745757
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3363581