Turn-off characteristics of 1000 V SiC gate-turn-off thyristors

Author

Seshadri, S. ; Casady, J.B. ; Agarwal, A.K. ; Siergiej, R.R. ; Rowland, L.B. ; Sanger, P.A. ; Brandt, C.D. ; Barrow, J. ; Piccone, D. ; Rodrigues, R. ; Hansen, T.

Author_Institution

ESSD-STC, Northrop Grumman Corp., Pittsburgh, PA, USA

fYear

1998

fDate

3-6 Jun 1998

Firstpage

131

Lastpage

134

Abstract

10 A/~175 V switching has been achieved using SiC GTOs. A 3 A/350 V package demonstrated 130 ns and 55 ns rise and fall times with turn-off losses of 3.2 μJ. Switching times increased by ~3× at 250°C. Devices exhibited a dV/dt limit of 700 V/μs. MOS-gated turn-off of 2 A/100 V is also demonstrated for the first time using a SiC GTO and Si MOSFET in a hybrid MTO^TM configuration

Keywords

MOS-controlled thyristors; losses; power MOSFET; power semiconductor switches; semiconductor device packaging; semiconductor device testing; thyristors; 10 A; 100 V; 1000 V; 130 ns; 175 V; 2 A; 250 C; 3 A; 3.2 muJ; 350 V; 55 ns; GTO switching; MOS-gated turn-off; Si; SiC; SiC GTO package; SiC GTO/Si MOSFET hybrid MTO configuration; SiC GTOs; fall time; gate-turn-off thyristors; rise time; switching times; turn-off characteristics; turn-off losses; Anodes; Cathodes; Current density; MOSFET circuits; Power MOSFET; Silicon carbide; Temperature; Testing; Thyristors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 1998. ISPSD 98. Proceedings of the 10th International Symposium on

Conference_Location

Kyoto

ISSN

1063-6854

Print_ISBN

0-7803-4752-8

Type

conf

DOI

10.1109/ISPSD.1998.702653

Filename

702653