Title :
A dynamic electro-thermal model for the IGBT
Author :
Hefner, Allen R., Jr.
Author_Institution :
Nat. Inst. of Stand. & Technol., Gaithersburg, MD, USA
Abstract :
A physics-based dynamic electrothermal model is developed for the insulated-gate bipolar transistor (IGBT) by coupling a temperature-dependent IGBT electrical model with dynamic thermal models for the IGBT silicon chip, packages, and heatsinks. The temperature-dependent IGBT electrical model describes the instantaneous electrical behavior in terms of the instantaneous temperature of the IGBT silicon chip surface. The thermal models determine the evolution of the temperature distribution within the thermal network and thus the instantaneous value of the silicon chip surface temperature used by the electrical model. The model is implemented in the Saber circuit simulator. The IGBT dynamic electrothermal model and the thermal network component models are verified for the range of temperature and power dissipation levels (heating rates) that are important for power electronic systems
Keywords :
circuit analysis computing; insulated gate bipolar transistors; power transistors; semiconductor device models; thermal analysis; IGBT electrical model; Saber circuit simulator; Si chip; dynamic electrothermal model; heating rates; heatsinks; instantaneous electrical behavior; instantaneous temperature; insulated-gate bipolar transistor; packages; power dissipation; power electronic systems; surface temperature; temperature dependent model; temperature distribution; thermal network component models; Circuit simulation; Dielectrics and electrical insulation; Electronic packaging thermal management; Electrothermal effects; Heat sinks; Insulated gate bipolar transistors; Power dissipation; Power system modeling; Silicon; Temperature distribution;
Conference_Titel :
Industry Applications Society Annual Meeting, 1992., Conference Record of the 1992 IEEE
Conference_Location :
Houston, TX
Print_ISBN :
0-7803-0635-X
DOI :
10.1109/IAS.1992.244425
