Title :
Effects of Drift-Region Design on the Reliability of Integrated High-Voltage LDMOS Transistors
Author :
Chen, Jone F. ; Chen, Shiang-Yu ; Tian, Kuen-Shiuan ; Wu, Kuo-Ming ; Su, Yan-Kuin ; Liu, C.M. ; Hsu, S.L.
Author_Institution :
Nat. Cheng Kung Univ., Tainan
fDate :
May 30 2007-June 1 2007
Abstract :
Effects of drift-region design on the hot-carrier reliability of n-channel integrated high-voltage lateral diffused MOS (LDMOS) transistors are investigated. LDMOS devices with various dosages of n-type drain drift (NDD) implant and various drift-region lengths (Ld) are studied. Results show that higher NDD dosage can reduce hot-carrier induced on-resistance (Ron) degradation. The shift in damage location is suggested to be the main cause. In addition, longer Ld can reduce Ron degradation significantly because of less lateral electric field. Our analysis indicates that higher NDD dosage and longer Ld are effective for improving the device lifetime of the LDMOS transistors.
Keywords :
CMOS integrated circuits; power MOSFET; semiconductor device reliability; CMOS integrated circuit; damage location; device lifetime; drift-region design; hot-carrier reliability; integrated high-voltage LDMOS transistors; n-channel integrated high-voltage lateral diffused MOS transistors; on-resistance degradation; CMOS technology; Degradation; Hot carrier effects; Hot carriers; Implants; Integrated circuit reliability; MOSFETs; Semiconductor device reliability; Stress; Voltage; LDMOS transistor; hot-carrier; integrated high-voltage device; reliability;
Conference_Titel :
Integrated Circuit Design and Technology, 2007. ICICDT '07. IEEE International Conference on
Conference_Location :
Austin, TX
Print_ISBN :
1-4244-0757-5
Electronic_ISBN :
1-4244-0757-5
DOI :
10.1109/ICICDT.2007.4299554
