• DocumentCode
    3363652
  • Title

    Technology, Design, and Implementation of High-K MIM Capacitors for High di/dt Applications: Microprocessor, IO, and Clocking

  • Author

    Sánchez, Héctor ; Mandhana, Om P. ; Johnstone, Bill ; Roberts, Doug ; Siegel, Joshua ; Melnick, Brad ; Celik, Muhsin ; Baker, Mike ; Hayden, Jim ; Min, Byoung ; Edgerton, John ; White, Bruce

  • Author_Institution
    Freescale Semicond. Inc., Austin
  • fYear
    2007
  • fDate
    May 30 2007-June 1 2007
  • Firstpage
    1
  • Lastpage
    6
  • Abstract
    In this work a MIM capacitor used to decouple the internal power supply is shown. The 8fF/um2 planar MIM capacitors of the 90 nm SOI technology are formed by physical vapor deposition of alternating layers of HfO2 and Ta2O5 dielectrics between TaN electrodes.
  • Keywords
    MIM devices; capacitors; hafnium compounds; microprocessor chips; power supply circuits; silicon-on-insulator; tantalum compounds; HfO2-Ta2O5-TaN; MIM capacitors; SOI technology; dielectrics; internal power supply; microprocessors; physical vapor deposition; Capacitance; Circuits; Clocks; Electrodes; High K dielectric materials; High-K gate dielectrics; MIM capacitors; Microprocessors; Power supplies; Wires;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Integrated Circuit Design and Technology, 2007. ICICDT '07. IEEE International Conference on
  • Conference_Location
    Austin, TX
  • Print_ISBN
    1-4244-0757-5
  • Electronic_ISBN
    1-4244-0757-5
  • Type

    conf

  • DOI
    10.1109/ICICDT.2007.4299556
  • Filename
    4299556
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3363652