DocumentCode
3363661
Title
Ferroelectric properties of Pt/SrRuO3/PLZT/Pt capacitors
Author
Kobune, M. ; Matsuura, O. ; Matsuzaki, T. ; Mineshige, A. ; Fujii, S.
Author_Institution
Dept. of Appl. Chem., Himeji Inst. of Technol., Hyogo, Japan
Volume
2
fYear
2000
fDate
2000
Firstpage
575
Abstract
The microstructure, leakage current density-electric field characteristics and fatigue characteristics for epitaxial c-axis oriented (Pb0.925La0.075)(Zr0.4Ti0.6 )O3, (PLZT) ferroelectric capacitors with layered Pt/SrRuO3 (SRO) top electrodes were investigated on PLZT films with thickness ranging from 100 to 400 nm. The leakage current for Pt/SRO/PLZT/Pt capacitors exhibited a tendency to increase with decreasing film thickness. The values of switchable polarization after 1010 cycles for Pt/PLZT/Pt capacitors as reference samples decreased up to around 17% of respective initial values, whereas the switchable polarization for Pt/SRO/PLZT/Pt capacitors showed no fatigue degradation due to polarization reversal until 1010 cycles
Keywords
dielectric hysteresis; dielectric losses; dielectric polarisation; ferroelectric capacitors; ferroelectric switching; ferroelectric thin films; lanthanum compounds; lead compounds; leakage currents; permittivity; platinum; strontium compounds; 100 to 400 nm; P-E hysteresis loops; Pt-SrRuO3-PbLaZrO3TiO3-Pt; Pt-SrRuO3-PLZT-Pt; Pt/SrRuO3/PLZT/Pt capacitors; SEM photographs; dielectric loss; epitaxial c-axis oriented (Pb0.925La0.075)(Zr0.4Ti0.6 )O3 ferroelectric capacitors; fatigue characteristics; fatigue degradation; ferroelectric properties; layered Pt/SrRuO3 top electrodes; leakage current density electric field characteristics; microstructure; polarization reversal; relative dielectric constant; switchable polarization; Capacitors; Degradation; Electrodes; Fatigue; Ferroelectric films; Ferroelectric materials; Leakage current; Microstructure; Polarization; Zirconium;
fLanguage
English
Publisher
ieee
Conference_Titel
Applications of Ferroelectrics, 2000. ISAF 2000. Proceedings of the 2000 12th IEEE International Symposium on
Conference_Location
Honolulu, HI
ISSN
1099-4734
Print_ISBN
0-7803-5940-2
Type
conf
DOI
10.1109/ISAF.2000.942386
Filename
942386
Link To Document