DocumentCode :
3363668
Title :
Advanced Model and RF-CMOS Design of the Boot-Strapped Inductor
Author :
Zito, D. ; Fonte, A. ; Neri, B.
Author_Institution :
Univ. of Pisa, Pisa
fYear :
2007
fDate :
11-14 Dec. 2007
Firstpage :
613
Lastpage :
616
Abstract :
This paper reports a new advanced design of the active circuit named Boot-Strapped Inductor (BSI), which realizes an equivalent inductor with an high quality factor (Q). In particular, a new small-signal circuit model is proposed for an accurate design at high frequency in a modern RF CMOS process, also by taking into account the issues of an algorithmic and low-power consumption circuit design. A case study for 13-GHz low-power applications by using a standard for 90 nm CMOS process is reported. The BSI provides an equivalent inductance close to 1.6 nH with an associated quality factor Q close to 200.
Keywords :
CMOS integrated circuits; Q-factor; active networks; bootstrap circuits; equivalent circuits; inductors; RF CMOS process; RF-CMOS design; active circuit; boot-strapped inductor; equivalent inductor; frequency 13 GHz; quality factor; size 90 nm; small-signal circuit model; Active inductors; CMOS process; Capacitance; Circuit synthesis; Equivalent circuits; Inductance; MOSFETs; Q factor; Radio frequency; Semiconductor device modeling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronics, Circuits and Systems, 2007. ICECS 2007. 14th IEEE International Conference on
Conference_Location :
Marrakech
Print_ISBN :
978-1-4244-1377-5
Electronic_ISBN :
978-1-4244-1378-2
Type :
conf
DOI :
10.1109/ICECS.2007.4511066
Filename :
4511066
Link To Document :
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