• DocumentCode
    3363690
  • Title

    Power, Performance, and Area Optimization Through the Use of Semiconductor Trench Decoupling Capacitors

  • Author

    Garofano, Umberto ; Yoder, Joseph W. ; Bickford, Jeanne Paulette ; Ng, Charlie S.

  • Author_Institution
    Int. Bus. Machines Corp., Essex Junction
  • fYear
    2007
  • fDate
    May 30 2007-June 1 2007
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    Designing semiconductor products increasingly involves trade-offs in cost, power, performance, and supply noise. While geometries continue to shrink, voltages no longer scale so requirements for managing supply noise become more stringent. Traditional design approaches using oxide decoupling capacitors improve performance by reducing supply noise, but result in increased area and leakage. As an alternative to oxide decoupling capacitors, mis paper explores the cost, noise reduction, and leakage advantages seen in representative IBM 90 nm and 65 nm ASIC Products through use of efficient trench decoupling capacitors.
  • Keywords
    capacitors; circuit noise; area optimization; noise reduction; oxide decoupling capacitors; semiconductor trench decoupling capacitors; supply noise; Application specific integrated circuits; Capacitance; Capacitors; Costs; Energy management; Noise reduction; Power supplies; Semiconductor device noise; Switching circuits; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Integrated Circuit Design and Technology, 2007. ICICDT '07. IEEE International Conference on
  • Conference_Location
    Austin, TX
  • Print_ISBN
    1-4244-0757-5
  • Electronic_ISBN
    1-4244-0757-5
  • Type

    conf

  • DOI
    10.1109/ICICDT.2007.4299558
  • Filename
    4299558