DocumentCode :
3363690
Title :
Power, Performance, and Area Optimization Through the Use of Semiconductor Trench Decoupling Capacitors
Author :
Garofano, Umberto ; Yoder, Joseph W. ; Bickford, Jeanne Paulette ; Ng, Charlie S.
Author_Institution :
Int. Bus. Machines Corp., Essex Junction
fYear :
2007
fDate :
May 30 2007-June 1 2007
Firstpage :
1
Lastpage :
4
Abstract :
Designing semiconductor products increasingly involves trade-offs in cost, power, performance, and supply noise. While geometries continue to shrink, voltages no longer scale so requirements for managing supply noise become more stringent. Traditional design approaches using oxide decoupling capacitors improve performance by reducing supply noise, but result in increased area and leakage. As an alternative to oxide decoupling capacitors, mis paper explores the cost, noise reduction, and leakage advantages seen in representative IBM 90 nm and 65 nm ASIC Products through use of efficient trench decoupling capacitors.
Keywords :
capacitors; circuit noise; area optimization; noise reduction; oxide decoupling capacitors; semiconductor trench decoupling capacitors; supply noise; Application specific integrated circuits; Capacitance; Capacitors; Costs; Energy management; Noise reduction; Power supplies; Semiconductor device noise; Switching circuits; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Integrated Circuit Design and Technology, 2007. ICICDT '07. IEEE International Conference on
Conference_Location :
Austin, TX
Print_ISBN :
1-4244-0757-5
Electronic_ISBN :
1-4244-0757-5
Type :
conf
DOI :
10.1109/ICICDT.2007.4299558
Filename :
4299558
Link To Document :
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