DocumentCode
3363690
Title
Power, Performance, and Area Optimization Through the Use of Semiconductor Trench Decoupling Capacitors
Author
Garofano, Umberto ; Yoder, Joseph W. ; Bickford, Jeanne Paulette ; Ng, Charlie S.
Author_Institution
Int. Bus. Machines Corp., Essex Junction
fYear
2007
fDate
May 30 2007-June 1 2007
Firstpage
1
Lastpage
4
Abstract
Designing semiconductor products increasingly involves trade-offs in cost, power, performance, and supply noise. While geometries continue to shrink, voltages no longer scale so requirements for managing supply noise become more stringent. Traditional design approaches using oxide decoupling capacitors improve performance by reducing supply noise, but result in increased area and leakage. As an alternative to oxide decoupling capacitors, mis paper explores the cost, noise reduction, and leakage advantages seen in representative IBM 90 nm and 65 nm ASIC Products through use of efficient trench decoupling capacitors.
Keywords
capacitors; circuit noise; area optimization; noise reduction; oxide decoupling capacitors; semiconductor trench decoupling capacitors; supply noise; Application specific integrated circuits; Capacitance; Capacitors; Costs; Energy management; Noise reduction; Power supplies; Semiconductor device noise; Switching circuits; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Integrated Circuit Design and Technology, 2007. ICICDT '07. IEEE International Conference on
Conference_Location
Austin, TX
Print_ISBN
1-4244-0757-5
Electronic_ISBN
1-4244-0757-5
Type
conf
DOI
10.1109/ICICDT.2007.4299558
Filename
4299558
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