Title :
The structural, dielectric and ferroelectric properties of La-modified bismuth titanate thin films prepared by sol-gel process
Author :
Zhu, Jianguo ; Yu, Chi ; Xiao, Dingquan ; Zhang, Wen ; Yuan, Xiaowu ; Zhu, Jiliang ; Yue, Xi
Author_Institution :
Dept. of Mater. Sci., Sichuan Univ., Chengdu, China
Abstract :
Lanthanum modified bismuth titanate (Bi4-xLaxTi3O12 BLT-10x) ferroelectric thin films were prepared by the sol-gel method using tetrabyl titanate, bismuth nitrate and lanthanum nitrate. Polycrystalline BLT-5 thin films were obtained at relatively low annealing temperatures of 600~650°C. The intensity of XRD peaks of BLT-5 thin films increased with increasing annealing temperature. Typical coercive electric field (Ec.) and remnant polarization (Pr) for BLT-5 thin films annealed at 650°C were Ec=67 kV/cm and Pr = 11.2 μ C/cm2 , respectively. The effect of heat treatment on the crystalline and electrical properties of BLT-5 thin films was also discussed
Keywords :
X-ray diffraction; annealing; bismuth compounds; dielectric hysteresis; dielectric losses; dielectric polarisation; ferroelectric thin films; lanthanum compounds; permittivity; sol-gel processing; 600 to 650 C; Bi4-xLaxTi3O12; Bi4-xLaxTi3O12 thin films; Si; XRD peak intensity; annealing temperature; coercive electric field; dielectric constant; dielectric properties; dissipation factor; ferroelectric properties; heat treatment; hysteresis loop; polycrystalline BLT-5 thin films; remnant polarization; sol-gel method; structural properties; tetrabyl titanate; Annealing; Bismuth; Dielectric thin films; Ferroelectric materials; Lanthanum; Polarization; Temperature; Titanium compounds; Transistors; X-ray scattering;
Conference_Titel :
Applications of Ferroelectrics, 2000. ISAF 2000. Proceedings of the 2000 12th IEEE International Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
0-7803-5940-2
DOI :
10.1109/ISAF.2000.942387
