Title :
Precise comparison of two-dimensional dopant profiles measured by electron holography and scanning capacitance microscopy
Author :
Yang, Jun-Mo ; Shaislamov, Ulugbek ; Hyun, Moon Seop ; Yoo, Jung Ho ; Kim, Jeoung Woo ; Kwak, Noh-Yeal ; Kim, Won ; Park, Joong Keun
Author_Institution :
Meas. & Anal. Team, Nat. Nanofab Center, Daejeon, South Korea
Abstract :
Detailed comparison of electron holography and scanning capacitance microscopy techniques for the 2D dopant profiling was carried out with using the same multilayered p-n junction specimen. The dopant profiles obtained from two methods are in good agreement with each other. It demonstrates that reliability of dopant profile measurement can be increased through precise comparison of 2D profiles obtained from various techniques.
Keywords :
doping profiles; electron holography; multilayers; p-n junctions; electron holography; multilayered p-n junction; scanning capacitance microscopy; two-dimensional dopant profile measurement; Argon; Atmospheric measurements; Image resolution; Junctions; Nanoscale devices; Particle measurements; Thickness measurement;
Conference_Titel :
Nanotechnology Materials and Devices Conference (NMDC), 2011 IEEE
Conference_Location :
Jeju
Print_ISBN :
978-1-4577-2139-7
DOI :
10.1109/NMDC.2011.6155352
