DocumentCode
3363708
Title
Precise comparison of two-dimensional dopant profiles measured by electron holography and scanning capacitance microscopy
Author
Yang, Jun-Mo ; Shaislamov, Ulugbek ; Hyun, Moon Seop ; Yoo, Jung Ho ; Kim, Jeoung Woo ; Kwak, Noh-Yeal ; Kim, Won ; Park, Joong Keun
Author_Institution
Meas. & Anal. Team, Nat. Nanofab Center, Daejeon, South Korea
fYear
2011
fDate
18-21 Oct. 2011
Firstpage
240
Lastpage
243
Abstract
Detailed comparison of electron holography and scanning capacitance microscopy techniques for the 2D dopant profiling was carried out with using the same multilayered p-n junction specimen. The dopant profiles obtained from two methods are in good agreement with each other. It demonstrates that reliability of dopant profile measurement can be increased through precise comparison of 2D profiles obtained from various techniques.
Keywords
doping profiles; electron holography; multilayers; p-n junctions; electron holography; multilayered p-n junction; scanning capacitance microscopy; two-dimensional dopant profile measurement; Argon; Atmospheric measurements; Image resolution; Junctions; Nanoscale devices; Particle measurements; Thickness measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanotechnology Materials and Devices Conference (NMDC), 2011 IEEE
Conference_Location
Jeju
Print_ISBN
978-1-4577-2139-7
Type
conf
DOI
10.1109/NMDC.2011.6155352
Filename
6155352
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