DocumentCode :
3363719
Title :
Artificial neural network-based design approach for nanoscale field effect diodes
Author :
Manavizadeh, N. ; Khodayari, A. ; Karbassian, F. ; Raissi, F. ; Soleimani, E. Asl
fYear :
2011
fDate :
18-21 Oct. 2011
Firstpage :
244
Lastpage :
247
Abstract :
In this paper, we have applied artificial neural network (ANN) for modeling and simulation of nanoscale filed effect diodes (FEDs). The simulation is based on ANN model which reduces the computational time while keeping the accuracy of physics-based model. Results of the proposed solution have been compared with the data obtained from the Dessis simulation and show that there is a good agreement between the results with the short computing time.
Keywords :
electronic engineering computing; field effect devices; neural nets; semiconductor device models; semiconductor diodes; ANN model; Dessis simulation; FED; artificial neural network-based design approach; nanoscale field effect diodes; physics-based model; Artificial neural networks; Iron; Measurement units;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nanotechnology Materials and Devices Conference (NMDC), 2011 IEEE
Conference_Location :
Jeju
Print_ISBN :
978-1-4577-2139-7
Type :
conf
DOI :
10.1109/NMDC.2011.6155353
Filename :
6155353
Link To Document :
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