Title :
Hydrogen induced degradation phenomena of PZT ferroelectric capacitors
Author :
Koo, June-Mo ; TaeHo Kini ; Kim, TaeHo
Author_Institution :
Dept. of Metall. & Mater. Eng., Kookmin Univ., Seoul, South Korea
Abstract :
During the CMOS process, ferroelectric capacitors show degraded ferroelectric properties due to a process involving hydrogen. When hydrogen diffuses in PZT thin films through noble metal electrodes (such as Pt, Ir), XRD data indicate a change of lattice parameters and XPS spectra exhibit a change in the Pb-O bonding in the crystalline perovskite phase. In particular, the variation of lattice parameter of PZT (Zr/Ti=20/80) depends on the thickness of the top electrodes (Pt). Ti/Ir hybrid structure top electrodes with various ratios of Ti/Ir thickness are evaluated in order to reduce the hydrogen effect
Keywords :
X-ray diffraction; X-ray photoelectron spectra; annealing; dielectric hysteresis; diffusion; ferroelectric capacitors; ferroelectric thin films; hydrogenation; lattice constants; lead compounds; CMOS process; H2 annealing; P-E hysteresis loops; PZT ferroelectric capacitors; Pb-O bonding; Pt-PZT-Pt; Pt-PbZrO3TiO3-Pt; SIMS depth profile; Ti-Ir; Ti/Ir hybrid structure top electrodes; XPS spectra; XRD data; annealing conditions; hydrogen diffusion; hydrogen related degradation; lattice parameters; noble metal electrodes; perovskite phase; sol-gel method; top electrode thickness; Bonding; CMOS process; Capacitors; Degradation; Electrodes; Ferroelectric materials; Hydrogen; Lattices; Transistors; X-ray scattering;
Conference_Titel :
Applications of Ferroelectrics, 2000. ISAF 2000. Proceedings of the 2000 12th IEEE International Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
0-7803-5940-2
DOI :
10.1109/ISAF.2000.942390
