DocumentCode :
3363764
Title :
Fatigue and data retention characteristics of single-grained Pb(Zr,Ti)O3 thin films
Author :
Lee, Lang-Sik ; Kim, Chan-Soo ; Joo, Seung-Ki
Author_Institution :
Dept. of Mater. Sci. & Eng., Seoul Nat. Univ., South Korea
Volume :
2
fYear :
2000
fDate :
2000
Firstpage :
595
Abstract :
Fatigue and data retention characteristics of single-grained lead zirconate titanate (PZT) thin films obtained by the PZT seeding method were investigated. There is no loss in switched polarization up to 2×1011 cycles using a 1 MHz square wave form at ±10 V in fatigue testing and no data loss after 30000 sec of memory retention at room temperature. From the activation energy measured at high temperatures, the time required 20% loss in remanent polarization is estimated to be 6.6×107 years at room temperature. In this study, we show that when there were no grain boundaries in the area measured, degradation such as fatigue and retention was not observed even with Pt electrodes. Thus, the main source of degradation is the grain boundary in the PZT thin films
Keywords :
dielectric hysteresis; dielectric polarisation; ferroelectric storage; ferroelectric switching; ferroelectric thin films; grain boundaries; lead compounds; sputtered coatings; 1 MHz; 10 V; 30000 s; 6.6E7 year; PZT seeding method; Pt-PZT-Pt; Pt-PbZrO3TiO3-Pt; Pt/SiO2/Si substrates; RF magnetron sputtering; activation energy; data retention characteristics; fatigue test; ferroelectric nonvolatile memories; grain boundary; memory retention; remanent polarization; room temperature; single-grained PZT thin films; single-grained Pb(Zr,Ti)O3 thin films; switched polarization; Degradation; Energy measurement; Fatigue; Grain boundaries; Loss measurement; Polarization; Temperature measurement; Testing; Titanium compounds; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Applications of Ferroelectrics, 2000. ISAF 2000. Proceedings of the 2000 12th IEEE International Symposium on
Conference_Location :
Honolulu, HI
ISSN :
1099-4734
Print_ISBN :
0-7803-5940-2
Type :
conf
DOI :
10.1109/ISAF.2000.942391
Filename :
942391
Link To Document :
بازگشت