Title :
A high performance plasma display panel driver IC using SOI
Author :
Sumida, Hitoshi ; Hirabayashi, Atsuo ; Shimabukuro, Hiroshi ; Takazawa, Yasumasa ; Shigeta, Yoshihxo
Author_Institution :
Fuji Electr. Co. Ltd., Nagano, Japan
Abstract :
In this paper, we demonstrate an advanced 200 V-class plasma display panel scan driver IC using dielectric isolation, which utilizes bonded SOI and trench isolation, and a lateral IGBT (LIGBT). We have accomplished a large reduction in chip size compared with ICs fabricated on a junction isolated wafer and have obtained good output characteristics by optimizing device parameters. Moreover, original techniques to improve the blocking capability of the integrated LIGBT and lateral p-channel MOSFET have been included in our fabricated IC and are also described in this paper
Keywords :
BIMOS integrated circuits; driver circuits; gas-discharge displays; insulated gate bipolar transistors; power MOSFET; power bipolar transistors; power integrated circuits; silicon-on-insulator; wafer bonding; 200 V; SOI; Si-SiO2; blocking capability; bonded SOI; chip size; device parameter optimization; dielectric isolation; integrated LIGBT; junction isolated wafer; lateral IGBT; lateral p-channel MOSFET; output characteristics; plasma display panel driver IC; plasma display panel scan driver IC; trench isolation; Costs; Dielectrics; Driver circuits; Flat panel displays; Insulated gate bipolar transistors; Integrated circuit noise; Large screen displays; MOSFET circuits; Plasma displays; Wafer bonding;
Conference_Titel :
Power Semiconductor Devices and ICs, 1998. ISPSD 98. Proceedings of the 10th International Symposium on
Conference_Location :
Kyoto
Print_ISBN :
0-7803-4752-8
DOI :
10.1109/ISPSD.1998.702654
