Preparation of PZT thin films for low voltage application by sol-gel method

Author

Soyama, N. ; Maki, K. ; Mori, S. ; Ogi, K.

Author_Institution

Sanda Plant, Mitsubishi Electr. Corp., Hyogo, Japan

Volume

2

fYear

2000

fDate

2000

Firstpage

611

Abstract

PZT ultrathin films with film thickness of 90 nm were prepared by the sol-gel method. By using modified sol-gel solutions, 90 nm-thick PZT films with good surface morphology were obtained even on Pt/SiO₂/Si substrates, in which nothing worked as a seeding layer. The obtained PZT films with various compositions were evaluated. Use of the modified solutions made it possible to make the film thinner without degradation of the properties. P-E hysteresis curves for PZT(30/70) films with film thickness of 90 nm were saturated at about 1 V and the Pr was 28 μC/cm². As a result, PZT thin films from the modified solution exhibited potential for low voltage drive FeRAM applications

Keywords

X-ray diffraction; dielectric hysteresis; ferroelectric capacitors; ferroelectric thin films; lead compounds; low-power electronics; sol-gel processing; surface structure; 1 V; 90 nm; I-V characteristics; P-E hysteresis curve; PZT; PZT ultrathin films; PbZrO3TiO3; Pt-SiO₂-Si; Pt/SiO₂/Si substrates; Si; film composition; film thickness; low voltage application; low voltage drive FeRAM; modified sol-gel solutions; saturation properties; sol-gel method preparation; surface morphology; Degradation; Ferroelectric films; Hysteresis; Low voltage; Nonvolatile memory; Random access memory; Semiconductor films; Substrates; Surface morphology; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Applications of Ferroelectrics, 2000. ISAF 2000. Proceedings of the 2000 12th IEEE International Symposium on

Conference_Location

Honolulu, HI

ISSN

1099-4734

Print_ISBN

0-7803-5940-2

Type

conf

DOI

10.1109/ISAF.2000.942395

Filename

942395