• DocumentCode
    3363849
  • Title

    Thermal-mechanical considerations of a novel power module with high junction temperature

  • Author

    Ho Siow Ling ; Lee Yong Jiun ; Hwang How Yuan ; Zhang Heng Yun ; Rhee, Daniel

  • Author_Institution
    Inst. of Microelectron., Singapore, Singapore
  • fYear
    2013
  • fDate
    11-13 Dec. 2013
  • Firstpage
    498
  • Lastpage
    503
  • Abstract
    Mechanical and thermal analyses are performed for a power module with target junction temperature of 220°C. The initial design of the package consists of six silicon carbide dies with electrical connections traditionally made by wires being replaced by copper clips and flip chip joints. From mechanical simulations, it is found that compliance of the copper clips affect the stress level at the attachment layer. Several clip designs were investigated and results shows that the design with the greatest flexibility will result in the lowest stress at the attachment layer. For properties of the molding compound, the higher the coefficient of thermal expansion (CTE), the larger the attachment stress whereas for molding compound modulus, the attachment stress can increase or decrease, depending on the corresponding CTE. From thermal simulations, it is found that voids at the attachment layer marginally affect the thermal characteristics while thickness and properties of the thermal interface materials (TIM) greatly affect the thermal performance. The findings suggest that when a metallic attachment material is chosen, dimensional parameters and material choices of the attachment material is less critical to the thermal performance. From power cycling analyses, it is observed that the rise in temperature is largely concentrated around the dies which are powered-up.
  • Keywords
    flip-chip devices; integrated circuit packaging; modules; stress analysis; thermal analysis; thermal expansion; voids (solid); wires (electric); CTE; TIM; attachment layer; attachment stress; coefficient of thermal expansion; copper clip design; dimensional parameters; electrical connections; flip chip joints; high junction temperature; mechanical analysis; mechanical simulations; metallic attachment material; molding compound; molding compound modulus; power cycling analysis; power module; silicon carbide dies; stress level; temperature 220 degC; thermal analysis; thermal interface materials; thermal simulations; voids; Compounds; Copper; Electronic packaging thermal management; Junctions; Materials; Microassembly; Stress;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronics Packaging Technology Conference (EPTC 2013), 2013 IEEE 15th
  • Conference_Location
    Singapore
  • Print_ISBN
    978-1-4799-2832-3
  • Type

    conf

  • DOI
    10.1109/EPTC.2013.6745770
  • Filename
    6745770