Title :
Observation of polarization reversal processes in Pb(Zr,Ti)O3 thin films using atomic force microscopy
Author :
Fujisawa, H. ; Matsumoto, Y. ; Shimizu, M. ; Niu, H.
Author_Institution :
Dept. of Electron., Himeji Inst. of Technol., Hyogo, Japan
Abstract :
The piezoresponse-imaging technique using atomic force microscopy (AFM) provides a substantial understanding of the polarization reversal process of ferroelectric thin films at the nanoscale level. In this study, in order to investigate the polarization reversal process and its dynamics in Pb(Zr,Ti)O3 (PZT) thin films, we examined the dependence of the switched area on the width of the switching pulse. The area of the switched domain increased from 2 × 10-3 to 3 × 10-1 μm2 as the pulse width increased from 500 ns to 100 ms. The switched area rapidly increased in the initial polarization process as the applied pulse width increased. However, the switched area stopped expanding at the grain boundaries and domain growth over grain boundaries was not observed
Keywords :
atomic force microscopy; dielectric polarisation; electric domain walls; ferroelectric switching; ferroelectric thin films; grain boundaries; lead compounds; 500 ns to 100 ms; AFM; D-E hysteresis loop; PZT; PZT thin film capacitors; PZT thin films; Pb(Zr,Ti)O3 thin films; PbZrO3TiO3; atomic force microscopy; domain wall sideward motions; ferroelectric thin films; grain boundaries; initial polarization process; nanoscale level; piezoresponse-imaging technique; polarization reversal process; switched domain area; switching pulse width; Atomic force microscopy; Electron microscopy; Ferroelectric materials; Grain boundaries; Microwave integrated circuits; Polarization; Pulse measurements; Space vector pulse width modulation; Transistors; Voltage;
Conference_Titel :
Applications of Ferroelectrics, 2000. ISAF 2000. Proceedings of the 2000 12th IEEE International Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
0-7803-5940-2
DOI :
10.1109/ISAF.2000.942397
